BFY193 HiRel NPN Silicon RF Transistor * HiRel Discrete and Microwave Semiconductor * For low noise, high-gain amplifiers up to 2 GHz * For linear broadband amplifiers * Hermetically sealed microwave package * fT = 8 GHz F = 2.3 dB at 2 GHz * esa Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 06 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFY193 (ql) - Pin Configuration 1=C 2=E 3=B 4=E - Package - MICRO-X1 (ql) Testing level: P: Professional testing H: High Rel quality S: Space quality ES: ESA qualified Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 Collector-emitter voltage, VBE = 0 VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 10 1) Total power dissipation Ptot 580 mW Junction temperature Tj 200 C Operating temperature range Top -65 ... 200 C Storage temperature Tstg -65 ... 200 C V mA TS 104C 2)3) 1The maximum permissible base current for VFBE measurements is 30mA (spotmeasurement duration < 1s) 2At T = 104C. For T > 104C derating is required S S 3T S is measured on the collector lead at the soldering point to the pcb 2007-08-16 1 BFY193 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS < 165 K/W Values Unit Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter min. typ. max. VFBE - - 1 V ICEX - - 600 A DC Characteristics Base-emitter forward voltage IE = 30 mA, IC = 0 Collector-emitter cutoff current VCE = 12 V, IB = 0,5 A2) Collector -base cutoff current A ICBO VCB = 20 V, IE = 0 - - 100 VCB = 10 V, IE = 0 - - 0.05 VEB = 2 V, IC = 0 - - 25 VEB = 1 V, IC = 0 - - 0.5 50 100 175 Emitter-base cutoff current IEBO DC current gain hFE - IC = 30 mA, VCE = 8 V 1T S is measured on the collector lead at the soldering point to the pcb 2This test assures V(BR)CE0 > 12V 2007-08-16 2 BFY193 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics (verified by random sampling) Transition frequency GHz fT IC = 40 mA, VCE = 5 V, f = 500 MHz 6.5 7.5 - IC = 50 mA, VCE = 8 V, f = 500 MHz - 8 - Ccb - 0.56 0.75 Cce - 0.34 - Ceb - 1.9 2.4 F - 2.3 2.9 12.5 13.5 - 8 9 - dB 16.5 17.5 - dBm Collector-base capacitance pF VCB = 10 V, VBE = vbe = 0, f = 1 MHz Collector emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, VCB = vcb = 0, f = 1 MHz Noise figure dB IC = 15 mA, VCE = 5 V, ZS = ZSopt , f = 2 GHz Power gain1) Gma IC = 40 mA, VCE = 5 V, ZS = ZSopt , ZL = ZLopt , f = 2 GHz |S21e|2 Transducer gain IC = 40 mA, VCE = 5 V, ZS = ZL = 50 , f = 2 GHz Output power POUT IC = 50 mA, VCE = 5 V, PIN = 10 dBm, ZS = ZL = 50 , f = 2 GHz 1/2 ma = |S21e / S12e | (k-(k-1) ), Gms = |S21e / S12e| 1G 2007-08-16 3 BFY193 Micro-X1 Package 1.05 0.25 1.02 0.1 0.76 3 o1.65 0.1 1 XY 4.2 -0.2 0.5 0.1 2 4 1.78 0.1 +0.05 -0.03 GXM05552 2007-08-16 4 BFY193 Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2007-08-16 5